Guide plate for a probe card and probe card provided with same

ABSTRACT

It is an object of the invention to provide a guide plate for a probe card with fine through holes at tight pitches and with increased strength. The guide plate  100  for a probe card includes a metal base  110;  first insulation layers  120;  and metal layers  130.  The metal base  110  has a plurality of through holes  111  to receive probes therethrough, and inner walls of the through holes  111.  The first insulation layers  120  are of tuboid shape and provided on the respective inner walls of the through holes  111  of the metal base  110.  The metal layers  130  are provided on the first insulation layers  120.

TECHNICAL FIELD

The invention relates to guide plates for probe cards for guiding probesand to probe cards provided with the guide plates.

BACKGROUND ART

A guide plate for a probe card of this type has guide holes forreceiving therethrough and guiding probes (see patent literature 1). Aninsulative resin plate is used in the guide plate for a probe card.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Publication Laid-open No.H10-026635

SUMMARY OF INVENTION Technical Problem

Probes have been increasingly finer in recent years, along with higherdegrees of integration of semiconductor devices. Guide plates for probecards also have finer guide holes in accordance with outer shapes ofprobes. Forming fine guide holes at tight pitches requires reducedthicknesses of the guide plates for probe cards. However, reducedthicknesses of the guide plates for probe cards lead to strengthdegradation of the guide plates for probe cards.

The invention has been made in view of the above circumstances, and itis an object of the invention to provide a guide plate for a probe cardwith fine through holes at tight pitches and while suppressing strengthdegradation of the guide plate. A probe card including the guide plateis also provided.

Solution to Problem

To solve the above problems, a guide plate for a probe card of theinvention includes a metal base and first insulation layers. The metalbase includes a plurality of through holes and inner walls of thethrough holes, the through holes being adapted to receive probestherethrough. The first insulation layers are of tuboid shape on therespective inner walls of the through holes of the metal base.

As the guide plate for a probe card of this aspect includes the metalbase, the thickness of the guide plate can be reduced while maintainingstrength of the guide plate. This makes it easy to form fine throughholes at tight pitches in the metal base. The first insulation layers oftuboid shape on the inner walls of the through holes can preventconduction of the probes with each other via the metal base even whenthe probes are brought into contact with the inner walls of the throughholes.

The guide plate for a probe card may further include metal layers on therespective first insulation layers. In the guide plate for a probe cardof this aspect, probes received through the through holes may contactwith the metal layers. However, the first insulation layers interveningbetween the metal layers and the metal base can prevent electricalconduction of the probes to each other via the metal base.

The guide plate for a probe card may further include second insulationlayers on a main surface and a back surface of the metal base.

A first probe card of the invention includes the guide plate for a probecard of any of the above aspect, a wiring board, and a plurality ofprobes. The wiring board is disposed so as to face the guide plate for aprobe card. The wiring board includes a plurality of electrodes arrangedat positions corresponding to the through holes. The probes are receivedthough the through holes of the guide plate. The probes each include afirst end in contact with one of the electrodes, a second end oppositethe first end, and an elastically deformable portion between the firstend and the second end. The elastically deformable portions areconfigured to elastically deform due to loads on the second ends so asto allow the probes to contact with the guide plate.

The probe card of this aspect can provide substantially the sameadvantageous effects as the above-described guide plate for a probecard. Also, when the second ends of the probes of the probe card contactwith respective electrodes of a semiconductor wafer or semiconductordevice and loads are applied to the second ends, high frequency currentflows through the probes and thereby generates Joule heat. Such Jouleheat may cause melt fractures and brittle fractures of the probes ifbeing fine in size. However, the above probe card is provided with theguide plate having the metal base. When the probes contact with theguide plate, Joule heat in the probes can be dissipated through themetal base. It is therefore possible to suppress melt fractures andbrittle fractures of the probes if being fine in size.

A second probe card of the invention includes the guide plate for aprobe card of any of the above aspect, a wiring board, and a pluralityof probes. The wiring board is disposed so as to face the guide plate.The wiring board includes a plurality of electrodes arranged atpositions corresponding to the through holes. The probes are receivedthough the through holes of the guide plate, are in contact with theguide plate, and are in contact with the electrodes.

The probe card of this aspect can provide substantially the sameadvantageous effects as the above-described guide plate for a probecard. Also, when the probes of the probe card contact with respectiveelectrodes of a semiconductor wafer or semiconductor device, highfrequency current flows through the probes and thereby generates Jouleheat. Such Joule heat may cause melt fractures and brittle fractures ofthe probes if they are fine in size. However, the probes are in contactwith the guide plate including the metal base, so that Joule heat in theprobes can be dissipated through the metal base. It is thereforepossible to suppress melt fractures and brittle fractures of the probesif they are fine in size.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a schematic plan view of a guide plate for a probe cardaccording to a first embodiment of the invention.

FIG. 1B is a cross-sectional view of the guide plate taken along a line1B-1B in FIG. 1A.

FIG. 2 is a cross-sectional view illustrating steps of manufacturing theguide plate.

FIG. 3A is a schematic cross-sectional view of the probe card accordingto the first embodiment of the invention.

FIG. 3B is an enlarged view of a portion 3B of the probe card shown inFIG. 3A.

FIG. 3C is an enlarged view of the portion 3B of the probe card at thetime of testing the probe card.

FIG. 4A is a schematic plan view of a guide plate for a probe cardaccording to a second embodiment of the invention.

FIG. 4B is a cross-sectional view of the guide plate taken along a line4B-4B in FIG. 4A.

FIG. 5 is a cross-sectional view illustrating steps of manufacturing theguide plate.

DESCRIPTION OF EMBODIMENTS

First and second embodiments of the invention will be described below.

First Embodiment

Firstly, a guide plate for a probe card according to the firstembodiment of the invention is described by referring to FIG. 1A andFIG. 1B. The guide plate 100 for a probe card as shown in FIG. 1A andFIG. 1B includes a metal base 110, a plurality of first insulationlayers 120, and a plurality of metal layers 130. These constituents ofthe guide plate 100 will be described in detail below.

The metal base 110 is made of metal having a thermal expansioncoefficient (thermal expansion coefficient of 2 ppm/° C. to 10 ppm/° C.)equal or close to that of a semiconductor wafer or semiconductor device.For example, the metal base 110 may be made of aluminum (Al), copper(Cu), nickel (Ni), or an alloy including any of these. The alloy may bealloy of aluminum and copper, alloy of aluminum and nickel, alloy ofcopper and nickel, alloy of aluminum, copper and nickel, Ni—Fe alloy orthe like. The metal base 110 has a plurality of through holes 111 andinner walls 112 of the through holes 111. The through holes 111 passthrough the thickness of the metal base 110. The through holes 111 areeach a hole in the shape of cylinder or polygonal prism (e.g.quadrangular prism). The through holes 111 have such inner shapes as toallow insertion therethrough of probes 200 of the probe card to bedescribed (see FIG. 3B and FIG. 3C mentioned above). The through holes111 are arranged at positions corresponding to positions of electrodesof the semiconductor wafer or semiconductor device.

The first insulation layers 120 are formed on the respective inner walls112 of the through holes 111 of the metal base 110. The first insulationlayers 120 are electrically insulating films, e.g. electricallydeposited films of organic materials such as a polyimide and an epoxyresin, or sputtered films of SiO₂, silicon nitride, or the like. Thefirst insulation layers 120 are in the shape of tube conforming to theinner shape of the through holes 111 (in the shape of tube having acircular or polygonal cross section).

The metal layers 130 are formed on the respective first insulationlayers 120 of the through holes 111 of the metal base 110. The metallayers 130 are in the shape of tube conforming to the inner shape of thefirst insulation layers 120 (in the shape of tube having a circular orpolygonal cross section). The metal layers 130 may be made of hardmetal, such as Rh- or Ni-based alloy. The metal layers 130 protect thefirst insulation layers 120.

A method of manufacturing the guide plate 100 for a probe card havingthe above-described configuration will be described below by referenceto FIG. 2. First, a substrate 10 of ceramic or silicon (Si) is prepared.The substrate 10 is subjected to electroplating to form thereon asacrificial layer 20 of copper. A resist 30 is applied on top of thesacrificial layer 20. The resist 30 then goes through exposure anddeveloping using a mask to make a plurality of apertures 31.

The apertures 31 of the resist 30 are then subjected to electroplatingto fill copper in the apertures 31. Thereafter, the resist 30 isremoved, with the copper filled in the apertures 31 left as posts 40 ofcircular prism shape. Then, a resist 50 is formed on the sacrificiallayer 20 by spray coating or by electrodeposition. The resist 50 thengoes through exposure and developing to form a pattern to expose theposts 40. Electroplating is given over the outer surfaces of the posts40 to form a plated layer 60 of hard metal such as Rh- or a Ni-basedalloy. A negative voltage is applied to the plated layer 60 to form aninsulation film 70 over the plated layer 60 by electrodeposition. Theresist 50 is removed.

Thereafter, the sacrificial layer 20 is subjected to electroplating toform a Ni—Fe plated layer 80 over the sacrificial layer 20. This stepresults in that the posts 40, the plated layer 60 and the insulationfilm 70 are embedded in the Ni—Fe plated layer 80. Thereafter, grindingis done on the upper face, as shown in FIG. 2, of the Ni—Fe plated layer80 and on the upper ends, as shown in FIG. 2, of the insulation film 70and of the plated layer 60. As a result, the upper ends, as shown, ofthe posts 40 are exposed from the insulation film 70 and the platedlayer 60, and the insulation film 70 and the plated layer 60 are formedinto cylindrical shapes.

Then, the substrate 10, the sacrificial layer 20, the posts 40, theplated layer 60, the insulation film 70 and the Ni—Fe plated layer 80are immersed in etchant. The etchant selectively dissolves copper (Cu)so as to etch the sacrificial layer 20 and the posts 40, and thesubstrate 10 is removed from the Ni—Fe plated layer 80. Consequently,the guide plate 100 for a probe card is obtained. The Ni—Fe plated layer80 subjected to grinding forms the metal base 110, and holes made byeliminating the posts 40 are the through holes 111. The insulation film70 consisting of tubes serves as the first insulation layers 120, andthe plated layer 60 consisting of tubes serves as the metal layers 130.It should be noted that the Ni—Fe plated layer 80 can be modified in anymanner as long as it is a plated layer of metal having a thermalexpansion coefficient equal or close to the thermal expansioncoefficient of the semiconductor wafer or semiconductor device.

The following describes a probe card according to the first embodimentof the invention by reference to FIG. 3A to FIG. 3C. The probe cardshown in FIG. 3A includes two guide plates for the probe card asdescribed above, a plurality of probes 200, a spacer 300, a wiring board400, an intermediate board 500, a plurality of spring probes 600, a maincircuit board 700 and a reinforcing plate 800. These constituents of theprobe card will be described in detail below. For the convenience ofexplanation, the two guide plates are identified as follows: guide platereference numerals with “a” represent the guide plate for the probe cardand its subelements at the distal side of the probe 200, while referencenumerals with “b” represent the guide plate for the probe card and itssubelements at the proximal side of the probe 200.

The main circuit board 700 is a printed circuit board. The main circuitboard 700 has a first face and a second face opposite the first face.The first face of the main circuit board 700 is provided with aplurality of electrodes 710. The second face of the main circuit board700 is provided with a plurality of external electrodes 720 at the outeredges thereof. The electrodes 710 are connected to the externalelectrode 720 via conductive lines (not shown) on the first face and/orthe second face of the main circuit board 700 and/or inside the maincircuit board 700.

The reinforcing plate 800 is a plate-like member that is harder than themain circuit board 700 (the reinforcing plate 800 may be a plate ofstainless steel or similar material). The reinforcing plate 800 isscrewed to the second face of the main circuit board 700. Thereinforcing plate 800 serves to suppress warp of the main circuit board700.

The intermediate board 500 is fixed to the first face of the maincircuit board 700 to be disposed between the main circuit board 700 andthe wiring board 400. A plurality of through holes 510 extends throughthe thickness of the intermediate board 500. The through holes 510 arearranged at positions corresponding to the positions of the electrodes710 of the main circuit board 700.

The wiring board 400 is a space transformer (ST) board. The wiring board400 is fixed to the main circuit board 700 and the reinforcing plate 800with fixing screws not shown so as to extend below the intermediateboard 500, as shown in FIG. 3, and in parallel to the main circuit board700. The wiring board 400 has a first face and a second face that isopposite to the first face. The first face of the wiring board 400 isprovided with a plurality of electrodes 410 at positions correspondingto the through holes 111 a, 111 b of the guide plates 100 a, 100 b forthe probe card. The second face of the wiring board 400 is provided witha plurality of electrodes 420 arranged at intervals. The electrodes 420are located on the respective plumb lines through the electrodes 710 ofthe main circuit board 700. The electrodes 410 are connected to theelectrodes 420 via a plurality of conductive lines (not shown) on thefirst face and/or the second face of the wiring board 400 and/or insidethe wiring board 400.

The spring probes 600 are received in the through hole 510 of theintermediate board 500 to be interposed between the electrode 710 of themain circuit board 700 and the electrode 420 of the wiring board 400.The spring probes 600 thus electrically connect between the electrodes710 and the electrodes 420.

The guide plates 100 a, 100 b for the probe card have the sameconfiguration as that of the guide plate 100 for a probe card, exceptthat the guide plate 100 b for the probe card has smaller outerdimensions than the guide plate 100 a for the probe card. As shown inFIG. 3A, the guide plate 100 a for the probe card is fixed to the wiringboard 400, spaced thereto and parallel thereto, with bolts and nuts.Spacers 300 are interposed between the opposite ends of the guide plate100 a for the probe card and the wiring board 400. The guide plate 100 bfor the probe card is fixed to the wiring board 400, parallel theretoand spaced thereto, with bolts and nuts so as to be disposed between thewiring board 400 and the guide plate 100 a for the probe card. Thethrough holes 111 a of the guide plate 100 a for the probe card arearranged in spaced relation in the plumb line direction (the verticaldirection as shown in FIG. 3A to FIG. 3C) relative to the respectivethrough holes 111 b of the guide plate 100 b for the probe card.

As shown in FIG. 3B, the probes 200 each include a first end 210, asecond end 220, and an elastically deformable portion 230. Each firstend 210, a lengthwise end of each probe 200, is received through anassociated through hole 111 b of the guide plate 100 b for the probecard and contactable with the metal layer 130 b of the through hole 111b. The first end 210 is in contact with and soldered to an associatedelectrode 410 of the wiring board 400. In other words, the first ends210 of the probes 200 are fixed to the electrodes 410 by soldering. Eachsecond end 220, the other lengthwise end of each probe 200 (i.e. the endopposite to the first end 210), is received through an associatedthrough hole 111 a of the guide plate 100 a for the probe card andcontactable with the metal layer 130 a of the through hole 111 a. Thesecond end 220 is a portion that is contactable with an electrode of asemiconductor wafer or of a semiconductor device. Each elasticallydeformable portion 230 is provided between the first end 210 and thesecond end 220 and bent generally in a C-shape.

The above-described probe card is to be mounted on a prober of a tester(not shown) and serves to measure electrical characteristics of ameasuring object 1 (see FIG. 3C), which is a semiconductor wafer orsemiconductor device as described below. Specifically, the prober makesthe probe card and the measuring object 1 face each other and then comeclose to each other. Then, the second ends 220 of the probes 200 of theprobe card are respectively brought into contact with electrodes 1 a ofthe measuring object 1, which respectively press the second ends 220 ofthe probes 200 (that is, loads are imposed on the second ends 220).Then, the elastically deformable portions 230 of the probes 200 areelastically deformed to buckle, so that the probes 200 generally buckle.The first ends 210 of the buckled probes 200 tilt to respectivelycontact with the upper ends (as shown in FIG. 3C) of the metal layer 130b of the guide plate 100 b for the probe card, while the second ends 220of the probes 200 tilt to respectively contact with the lower ends (asshown in FIG. 3C) of the metal layers 130 a of the guide plate 100 a forthe probe card. This state allows the tester to measure electricalcharacteristics of the measuring object 1.

In the probe card as described above, as the guide plates 100 a, 100 bfor the probe card include the metal bases 110 a, 110 b, respectively,as their base material, the thickness of the guide plates 100 a, 100 bcan be reduced while maintaining strengths of the guide plates 100 a,100 b. Accordingly, fine through holes 111 a, 111 b can be easily formedin the metal bases 110 a, 110 b, respectively, at tight pitches.

Further, the first insulation layers 120 b, 120 a and the metal layers130 b, 130 a are laminated in this order on the inner walls 112 a, 112 bof the through holes 111 b, 111 a of the metal bases 110 b, 110 a. Inother words, each first insulation layer 120 b exists between the innerwall 112 b of each through hole 111 b and each metal layer 130 b, andeach first insulation layer 120 a exists between the inner wall 112 a ofeach through hole 111 a and each metal layer 130 a. This makes itpossible to prevent conduction of the probes 200 with each other via themetal bases 110 b, 110 a even when the first and second ends 210, 220 ofthe probe 200 are brought into contact with the metal layers 130 b, 130a. Further, when the second ends 220 of the probes 200 respectivelycontact with the electrodes 1 a of the measuring object 1,high-frequency current flows through the probes 200 and therebygenerates Joule heat in the probes 200. It should be noted that, duringa period when the Joule heat is generated, the first and second ends210, 220 of the respective probes 200 are in contact with the metallayers 130 b, 130 a of the through holes 111 b, 111 a of the metal bases110 b, 110 a. Hence, the Joule heat in the probes 200 can be dissipatedthrough the metal bases 110 b, 110 a. It is therefore possible tosuppress melt fractures and brittle fractures of the fine probes 200 dueto such Joule heat. The dissipated Joule heat also contributes to anincreased value of the current flowing through the probes 200.

Further, metal bases 110 a, 110 b are made of metal having a thermalexpansion coefficient equal or close to that of a semiconductor wafer orsemiconductor device. Accordingly, even when the probe card is used formeasuring electrical characteristics of a semiconductor wafer orsemiconductor device under a hot environment, the heat causes the guideplates 100 a, 100 b for the probe card to expand in a same or similarmanner to the semiconductor wafer or semiconductor device. If the guideplates 100 a, 100 b for the probe card thermally expanded in a verydifferent manner from the semiconductor wafer or semiconductor device,the second ends 220 of the probes 200 guided by the through holes 111 aof the guide plate 100 a for the probe card would be displaced relativeto the electrodes of the semiconductor wafer or semiconductor device.Such displacement would cause contact failures of the probes 200 to thesemiconductor wafer or semiconductor device. However, such possibilitycan be reduced in the present probe card. Further, denoising can beachieved by grounding the metal base 110′.

Second Embodiment

Next, a guide plate for a probe card according to the second embodimentof the invention will be described by reference to FIG. 4A and FIG. 4B.The guide plate 100′ for a probe card shown in FIG. 4A and FIG. 4Bincludes a metal base 110′, a plurality of first insulation layers 120′and a plurality of second insulation layers 130′. These constituents ofthe guide plate 100′ will be described in detail below.

The metal base 110′ is made of metal having a thermal expansioncoefficient (thermal expansion coefficient of 4 ppm/° C. to 10 ppm/° C.)equal or close to that of a semiconductor wafer (not shown) or asemiconductor device (not shown). For example, the metal base 110′ maybe made of a Ni—Fe alloy. The metal base 110′ have a plurality ofthrough holes 111′ and inner walls 112′ of the through holes 111′. Thethrough holes 111′ pass through the thickness of the metal base 110′.The through holes 111′ are each a hole in the shape of cylinder orpolygonal prism (e.g. quadrangular prism). The through holes 111′ havesuch inner shapes as to allow insertion therethrough of probes 200 ofthe probe card to be described (see FIG. 3B and FIG. 3C mentionedabove). The through holes 111′ are arranged at positions correspondingto positions of electrodes of the semiconductor wafer or semiconductordevice.

Insulative oxide film layers are formed by thermally-oxidization on theouter surfaces, namely the upper surface (main surface in the claims),the lower surface (back surface in the claims) and the outer peripheralsurface, of the metal base 110′ and the inner walls 112′ of the throughholes 111′. The insulative oxide film layers (thickness: 0.5 μm to 2 μm)formed on the outer surfaces of the metal base 110′ will be referred toas second insulation layers 130′, and the insulative oxide film layersformed on the inner walls 112′ of the through holes 111′ will bereferred to as first insulation layers 120′. The first insulation layers120′ and the second insulation layers 130′ are continuous with eachother. The first insulation layers 120′ are in the shape of tubeconforming to the inner shape of the through holes 111′ (in the shape oftube having a circular or polygonal cross section). The first and secondinsulation layers 120′, 130′ are electrically insulative.

A method of manufacturing the guide plate 100′ for a probe card havingthe above-described constitution will be described below by reference toFIG. 5. First, a substrate 10′ of ceramic or silicon (Si) is prepared.The substrate 10′ is subjected to electroplating to form thereon acopper sacrificial layer 20′. A resist 30′ is applied on top of thesacrificial layer 20′. The resist 30′ then goes through exposure anddeveloping using a mask to form a plurality of resist posts 31′ on thesacrificial layer 20′ (i.e. portions of the resist 30′ other than theresist posts 31′ are removed).

Then electroplating is performed on the sacrificial layer 20′ to formthereon a Ni—Fe plated layer 40′. This step results in that the resistposts 31′ are embedded in the Ni—Fe plated layer 40′. Thereafter,grinding is done on the upper surface, as shown, of the Ni—Fe platedlayer 40′ so as to expose the upper ends, as shown in FIG. 5, of theresist posts 31′ from the Ni—Fe plated layer 40′. The resist posts 31′are then removed to make the through holes 41′ in the Ni—Fe plated layer40′.

The substrate 10′, the sacrificial layer 20′ and the Ni—Fe plated layer40′ are immersed in an etchant. The etchant selectively dissolves copper(Cu) so as to etch the sacrificial layer 20′, and the substrate 10′ isremoved from the Ni—Fe plated layer 40′. Alternatively, in place ofetching the sacrificial layer 20′, it is also possible to physicallyremove the substrate 10′ from the sacrificial layer 20′ and physicallyremove the sacrificial layer 20′ from the Ni—Fe plated layer 40′.Thereafter, the Ni—Fe plated layer 40′ is heated in an inert gascontaining an oxygen gas at a temperature of 400° C. to 800° C. forthermally oxidizing the outer surfaces, namely the upper surface (mainsurface), the lower surface (back surface) and the outer peripheralsurface, of the Ni—Fe plated layer 40′ and the inner walls of thethrough holes 41′. This is how to obtain the guide plate 100′ for aprobe card. The Ni—Fe plated layer 40′ forms the metal base 110′, andthe through holes 41′ form the through holes 111′. The insulative oxidefilm layers formed on the outer surfaces of the Ni—Fe plated layer 40′by thermal oxidation form the second insulation layers 130′, and theinsulative oxide film layers formed on the inner walls of the throughholes 41′ form the first insulation layers 120′. The Ni—Fe plated layer40′ can be modified to any metal plated layer having a thermal expansioncoefficient equal or close to that of the semiconductor wafer orsemiconductor device.

The following describes a probe card according to the second embodimentof the invention is described by reference to FIG. 3A to FIG. 3C forconvenience of explanation. This probe card has the same configurationas the probe card of the first embodiment, except that the present probecard has two guide plates 100′ for the probe card, not the guide plates100 a, 100 b for a probe card. The difference will be described indetail below, but the overlapping features will not be described.

Two guide plates 100′ for a probe card differ from each other in thatthat one of the guide plates 100′ for the probe card has smaller outerdimensions than the other. The one of the guide plates 100′ for theprobe card is used in place of the guide plate 100 b for the probe card,and the other guide plate 100′ for the probe card is used in place ofthe guide plate 100 a for the probe card. Specifically, the other guideplate 100′ for the probe card is fixed to the wiring board 400, spacedthereto and parallel thereto, with bolts and nuts. Spacers 300 areinterposed between the opposite ends of the other guide plate 100′ forthe probe card and the wiring board 400. The one of the guide plates100′ for the probe card is fixed to the wiring board 400, parallelthereto and spaced thereto, with bolts and nuts so as to be disposedbetween the wiring board 400 and the other guide plate 100′ for theprobe card. The through holes 111′ of the one of the guide plates 100′for the probe card are arranged are arranged in spaced relation in theplumb line direction (the vertical direction as shown in FIG. 3A to FIG.3C) relative to the respective through holes 111′ of the other guideplate 100′.

The first end 210 of each probe 200 is received through an associatedthrough hole 111′ of the one of the guide plates 100′ for the probe cardand contactable with the first insulation layer 120′ of the through hole111′. The second end 220 of each probe 200 is received through anassociated through hole 111′ of the other guide plate 100′ for the probecard and contactable with the first insulation layer 120′ of the throughhole 111′.

The above-described probe card is to be mounted on a prober of a tester(not shown) and serves to measure electrical characteristics of ameasuring object 1 (see FIG. 3C for convenience of explanation), whichis a semiconductor wafer or semiconductor device. Specifically, theprober makes the probe card and the measuring object 1 face each otherand then come close to each other. Then, the second ends 220 of theprobes 200 of the probe card are respectively brought into contact withelectrodes 1 a of the measuring object 1, which respectively press thesecond ends 220 of the probes 200 (that is, loads are imposed on thesecond ends 220). Then, the elastically deformable portions 230 of theprobes 200 are elastically deformed to buckle, so that the probes 200generally buckle. The first ends 210 and the second ends 220 of thebuckled probes 200 are brought into contact with the upper and lowerends, respectively (as shown in FIG. 3C, referred to for convenience ofexplanation) of the first insulation layers 120′ of one and the other,respectively, of the guide plates 100′ for the probe card. This stateallows the tester to measure electrical characteristics of the measuringobject 1.

In the probe card as described above, as the guide plates 100′ for theprobe cards include the metal bases 110′ as their base material, thethickness of the guide plates 100′ can be reduced while maintainingstrengths of the guide plates 100′ . This makes it easy to form finethrough holes 111′ at tight pitches in the metal bases 110′.

Further, the first insulation layers 120′ are formed on the inner walls112′ of the through holes 111′ of the metal bases 110′. This makes itpossible to prevent electrical conduction of the probes 200 to eachother via the metal bases 110′ even when the first and second ends 210,220 of the probes 200 contact with the first insulation layers 120′ .Further, when the second ends 220 of the probes 200 respectively contactwith the electrodes 1 a of the measuring object 1, high-frequencycurrent flows through the probes 200 and thereby generates Joule heat inthe respective probes 200. It should be noted that, during a period whenthe Joule heat is generated, the first and second ends 210, 220 of therespective probes 200 are in contact with the first insulation layers120′ of the through holes 111′ of the metal bases 110′. Hence, the Jouleheat in the probes 200 can be dissipated through the metal bases 110′.It is therefore possible to suppress melt fractures and brittlefractures of the probes 200, if being fine in size, due to such Jouleheat. The dissipated Joule heat also contributes to an increased valueof the current flowing through the probes 200.

Further, the metal bases 110′ are made of metal having a thermalexpansion coefficient equal or close to that of a semiconductor wafer orsemiconductor device. Accordingly, in the case where the probe card isused for measuring electrical characteristics of such a semiconductorwafer or semiconductor device under a hot environment, the guide plates100′ for the probe card expands in a same or similar manner to thesemiconductor wafer or semiconductor device. If the guide plates 100′for the probe card thermally expanded in a very different manner fromthe semiconductor wafer or semiconductor device, the second ends 220 ofthe probes 200 guided by the through holes 111′ of the guide plate 100′for the probe card would be displaced relative to the electrodes of thesemiconductor wafer or semiconductor device. Such displacement wouldcause the probes 200 to fail to contact with the semiconductor wafer orsemiconductor device. However, such possibility can be reduced in thepresent probe card. Further, denoising can be achieved by grounding themetal base 110′.

The above-described guide plates for probe cards and the above-describedprobe cards are not limited to the above-described embodiments but canbe modified in any manner within the scope of claims. The modificationswill be described in detail hereinafter.

In the above first and second embodiments, the metal base of a guideplate for a probe card is made of metal having a thermal expansioncoefficient equal or close to that of a semiconductor wafer orsemiconductor device. However, metal constituting the metal base is notlimited to metals described in the above first and second embodimentsbut may be other metals. Further, any modifications may be made to theinner walls of the through holes of the metal base as long as they areprovided thereon at least with the tuboid first insulation layers. Forexample, one or a plurality of other layers (metal layers, insulationlayers, etc.) can be provided on each first insulation layer. The firstinsulation layers 120 of the first embodiment may be modified toinsulative oxide film layers formed by thermally oxidizing the innerwalls of the through holes 111 of the metal base 110. The firstinsulation layers 120′ of the second embodiment may be modified toorganic electrodeposition films of polyimide, an epoxy resin or thelike, or to sputtered films of sputtered films of SiO₂, silicon nitride,or the like, laminated on the inner walls of the through holes 111′ ofthe metal base 110′.

In the above second embodiment, the second insulation layers 130′ asinsulative oxide film layers are formed on the upper surface, the lowersurface, and the outer peripheral surface of the metal base 110′.However, they may be modified to any configuration in which at least oneof the upper surface (main surface), the lower surface (back surface),and the outer peripheral surface of the metal base 110′ is provided witha second insulation layer. For example, the second insulation layers asinsulative oxide film layers may be provided only on the upper surfaceand the lower surface, formed by thermally oxidizing the metal base withits outer peripheral surface masked. It is also possible to laminate thesecond insulation layer(s) on at least one of the upper surface, thelower surface and the outer peripheral surface of the metal base 110′.Still further, it is possible to provide the second insulation layers asinsulative oxide film layers only on the inner walls of the throughholes of the metal base by masking the upper surface, the lower surface,and the outer peripheral surface of the metal base 110′.

In the above first embodiment, the metal layers 130 are in the shape oftube conforming to the inner shape of the first insulation layers 120.However, the metal layers can be omitted. Alternatively, the metallayers may be modified to any layer on the first insulation layers. Forexample, the metal layers can be provided only on portions of the firstinsulation layers (on portions contactable with the probes). The metallayer may be of metals other than hard metal such as Rh- or Ni-basedalloy.

In the above first and second embodiments, the probes 200 each includethe first end 210, the second end 220, and the elastically deformableportion 230. However, the probe can be modified in any manner as long asthey may be received through through-holes formed in a guide plate for aprobe card according to the first or second embodiment or one of themodifications as described above. For example, the probes may be needlesof rectilinear or cantilever shape. Also in this case, at least one ofthe first and second lengthwise ends of each probe can be insertedthrough a through hole formed in a guide plate for a probe cardaccording to the first or second embodiment or one of the modificationsas described above.

In the first embodiment, the probes 200 are contactable with the firstinsulation layers on the inner walls of the through holes of the guideplate for the probe card, while in the second embodiment, the probes 200are contactable with the metal layers on the first insulation layers ofthe guide plate for a probe card. However, the probes may not becontactable with the first insulation layers on the inner walls of thethrough holes of the guide plate for a probe card or with the metallayers on the first insulation layers. Alternatively, the probes may bealways in contact with the first insulation layers on the inner walls ofthe through holes of a guide plate for a probe card or with the metallayers on the first insulation layers (that is, the probes may be alwaysin contact with a guide plate).

The elastically deformable portions can be omitted. In the first andsecond embodiments, the elastically deformable portions 230 of theprobes 200 are generally of C-shape. However, the elastically deformableportions may be any shape that allow elastic deformation when the secondends of the probes are under load so as to contact with the firstinsulation layers or the metal layers of the through holes of a guideplate for a probe card according to the first or second embodiment orone of the modifications as described above. For example, theelastically deformable portions may be generally of L-shape, or of ashape having a portion tilted with respect to the lengthwise directionof the first and the second ends.

The probe card can be provided without the intermediate board 500, thespring probe 600, the main circuit board 700 and/or the reinforcingplate 800. Further, the wiring board may or may not be connected toanother board (including the main circuit board). The wiring boarditself can be used as the main circuit board. The wiring board may beelectrically connected to another circuit board via the spring probes600 or via any well-known connection means such as common probes andcables. Any of the modification as described in this paragraph may bemade to a probe card with probes that are always in contact with theguide plate.

It should be appreciated that the materials, shapes, dimensions,numbers, arrangements, and other configurations of the constituents ofthe guide plates for a probe card and the probe cards of the aboveembodiments are described by way of example only and may be modified inany manner if they can perform similar functions.

REFERENCE SIGNS LIST

-   100, 100 a, 100 b: guide plate for a probe card

110, 110 a, 110 b: metal base

-   -   111, 111 a, 111 b: through hole    -   112, 112 a, 112 b: inner wall of through hole

120, 120 a, 120 b: first insulation layer

130, 130 a, 130 b: metal layer

-   100′: guide plate for a probe card

110′: metal base

-   -   111′: through hole    -   112′: inner wall of through hole

120′: first insulation layer

130′: second insulation layer

-   200: probe

210: first end

220: second end

230: elastically deformable portion

-   300: spacer-   400: wiring board-   500: intermediate board-   600: spring probe-   700: main circuit board-   800: reinforcing plate

1-5. (canceled)
 6. A method of manufacturing a guide plate for a probecard, the method comprising: forming first plated layers on respectiveouter surfaces of a plurality of posts; forming insulation films on therespective first plated layers; forming a second plated layer such thatthe posts, the first plated layers, and the insulation films areembedded in the second plated layer; and eliminating the posts such thatthe second plated layer has through holes at portions where the postshave been eliminated.
 7. The method according to claim 6, wherein theposts are provided on a sacrificial layer of copper, the forming of thefirst plated layers includes giving electroplating over the posts toform the first plated layers on the respective outer surfaces of theposts, the forming of the insulation films includes applying a negativevoltage to the first plated layers to form the insulation films over thefirst plated layers by electrodeposition, the forming of the secondplated layer includes giving electroplating over the sacrificial layerto form thereon the second plated layer with the posts, the first platedlayers, and the insulation films embedded in the second plated layer,the method further includes removing the sacrificial layer together withthe removal of the posts.
 8. A guide plate for a probe card manufacturedby the method according to claim 6, the guide plate comprising: a metalbase consisting of the second plated layer including the through holes,the through holes being adapted to receive probes therethrough; theinsulation films on respective inner walls of the through holes of themetal base; and the first plated layers on the respective insulationfilms.
 9. A guide plate for a probe card manufactured by the methodaccording to claim 7, the guide plate comprising: a metal baseconsisting of the second plated layer including the through holes, thethrough holes being adapted to receive probes therethrough; theinsulation films on respective inner walls of the through holes of themetal base; and the first plated layers on the respective insulationfilms.